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| CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 1/5 BTC4062N3 Features * High Breakdown Voltage:BVCEO350V * Complementary to BTA1722N3 * Pb-free package Symbol BTC4062N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 225 150 -55~+150 Unit V V V mA mW C C BTC4062N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 *VBE(sat) 3 VBE(on) hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob Min. 350 350 6 20 30 30 20 15 40 Typ. Max. 50 50 0.3 0.35 0.5 1.0 0.75 0.85 0.9 2 200 200 200 6 Unit V V V nA nA V V V V V V V V MHz pF Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 2/5 Test Conditions IC=100A IC=1mA IE=10A VCB=250V VEB=5V IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA VCE=10V, IC=100mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=20V, IC=10mA, f=20MHz VCB=20V, IE=0A, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Ordering Information Device BTC4062N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 1Z BTC4062N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 125 Saturation Voltage---(mV) 1000 Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 3/5 Saturation Voltage vs Collector Current 75 Current Gain---HFE 125 75 100 100 25 25 HFE@VCE=10V 10 0.1 1 10 100 1000 Collector Current---IC(mA) VCE(SAT)@IC=10IB 10 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 250 Power Derating Curve Power Dissipation---PD(mW) Saturation Voltage-(mV) 200 150 100 50 0 75 125 25 VCE(SAT)@IC=10IB 100 0.1 1 10 100 1000 Collector Current IC-(mA) 0 50 100 150 200 Ambient Temperature---TA( ) BTC4062N3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 4/5 Carrier Tape Dimension BTC4062N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 5/5 A L 3 B 1 2 S Marking: TE 1Z V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4062N3 CYStek Product Specification |
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